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Freescale Semiconductor Technical Data
Document Number: MRF7S21210H Rev. 0, 7/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD - SCDMA, PCN - PCS/cellular radio and WLL applications. * Typical Single- Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 18.5 dB Drain Efficiency -- 29% Device Output Signal PAR -- 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 33 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power * Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21210HSR3
2110 - 2170 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFET
CASE 465A - 06, STYLE 1 NI - 780S
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1) Symbol VDSS VGS VDD Tstg TC TJ CW Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 253 1.5 Unit Vdc Vdc Vdc C C C W W/C
CW Operation @ TC = 25C Derate above 25C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 190 W CW Case Temperature 72C, 63 W CW Symbol RJC Value (2) 0.33 0.37 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF7S21210HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate- Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain- Source On - Voltage (VGS = 10 Vdc, ID = 5.13 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 2.02 257 516 -- -- -- pF pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 2 2.7 5.4 0.2 2.7 -- 7 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 17 26 5.5 -- -- 18.5 29 5.9 - 33 - 15 20.5 -- -- - 31 -8 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued)
MRF7S21210HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic IMD Symmetry @ 130 W PEP, Pout where IMD Third Order Intermodulation ^ 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Average Group Delay @ Pout = 190 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 190 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110- 2170 MHz Bandwidth IMDsym -- 15 -- MHz
VBWres GF Delay G P1dB
-- -- -- -- -- -- --
60 1.2 1.1 2.5 26 0.019 0.011
-- -- -- -- -- -- --
MHz dB ns dB/C dBm/C
MRF7S21210HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z20 VSUPPLY + R2 C1 C2 C3 Z18 C10 C11 C12 C19
R3 RF INPUT
Z10 Z11 Z12 Z13 Z14 Z15 Z16 RF C15 Z17 OUTPUT
Z1
Z2
Z3
Z4 C5
Z5
Z6
Z7
Z8
Z9
C13
DUT C6 Z19 Z21
C4
C14
+ C9 C8 C7 C16 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20, Z21 PCB C17 C18 C20
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
0.402 x 0.066 Microstrip 0.840 x 0.076 Microstrip 0.029 x 0.076 Microstrip 0.059 x 0.118 Microstrip 0.059 x 0.118 Microstrip 0.029 x 0.076 Microstrip 0.194 x 0.076 Microstrip 0.510 x 0.533 Microstrip 0.114 x 0.533 Microstrip 0.139 x 1.268 Microstrip 0.304 x 1.201 Microstrip
0.044 x 0.613 Microstrip 0.398 x 0.102 Microstrip 0.071 x 0.220 Microstrip 0.071 x 0.220 Microstrip 0.439 x 0.066 Microstrip 0.764 x 0.066 Microstrip 0.353 x 0.090 Microstrip 0.797 x 0.090 Microstrip 0.660 x 0.120 Microstrip Taconic RF35, 0.030", r = 3.5
Figure 1. MRF7S21210HSR3 Test Circuit Schematic
Table 5. MRF7S21210HSR3 Test Circuit Component Designations and Values
Part C1, C9, C11, C12, C17, C18 C2, C8 C3, C7, C10, C13, C14, C16 C4 C5 C6 C15 C19, C20 R1, R2 R3 Description 10 F, 50 V Chip Capacitors 100 nF Chip Capacitors 6.8 pF Chip Capacitors 0.3 pF Chip Capacitor 5.6 pF Chip Capacitor 0.2 pF Chip Capacitor 0.4 pF Chip Capacitor 470 F Electrolytic Capacitors 10 K, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number C5750X5R1H106MT 12065C104KAT ATC100B6R8BT500XT ATC100B0R3BT500XT ATC100B5R6BT500XT ATC100B0R2BT500XT ATC100B0R4BT500XT 2222 12018471 CRCW12061002FKEA CRCW12061000FKEA Manufacturer TDK AVX ATC ATC ATC ATC ATC BC Components Vishay Vishay
MRF7S21210HSR3 4 RF Device Data Freescale Semiconductor
C10 R1 R3 R2 C1 C2 C5 C3 C19 CUT OUT AREA C13 C15 C11 C12
C4
C6
C14 C8 C7
C20
C17 C16
C18
C9
MRF7S21210HS Rev. 0
Figure 2. MRF7S21210HSR3 Test Circuit Component Layout
MRF7S21210HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D Gps VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA, Single-Carrier W-CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF D, DRAIN EFFICIENCY (%) 20 19 18 Gps, POWER GAIN (dB) 17 16 15 14 13 12 11 PARC 10 2060 2080 IRL ACPR 31 30 29 28 27 -29 -31 ACPR (dBc) -33 -35 -37 2100 2120 2140 2160 2180 2200 -39 2220 IRL, INPUT RETURN LOSS (dB) 0 -4 -8 -12 -16 -20 -1 -1.2 -1.4 -1.6 -1.8 -2 PARC (dB)
f, FREQUENCY (MHz)
Note: Measurement conducted with device soldered on Freescale test fixture. Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg.
19 IDQ = 2100 mA 18 Gps, POWER GAIN (dB) 1750 mA 1400 mA -10 -20 -30 IM3-L -40 -50 IM7-L -60 -70 1 10 TWO-TONE SPACING (MHz) 100 IM7-U IM5-U IM5-L IM3-U VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
17
16
1050 mA
15 700 mA 14 1 10 Pout, OUTPUT POWER (WATTS) CW 100 300 VDD = 28 Vdc, f = 2140 MHz CW Measurements
IMD, INTERMODULATION DISTORTION (dBc)
Figure 4. CW Power Gain versus Output Power
Figure 5. Intermodulation Distortion Products versus Tone Spacing
-25 -30 -35 -40 -45 -50 -55 ACPR (dBc)
19 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 18.5 Gps, POWER GAIN (dB) 18 17.5 17 16.5 16
1 -1 dB = 48.327 W 0 -1 -2 -3 -4 -5 30 PARC VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 50 70 90 110 ACPR D
45 40 35 30 -3 dB = 89.144 W Gps 25 20 15 130
-2 dB = 67.216 W
Pout, OUTPUT POWER (WATTS)
Figure 6. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF7S21210HSR3 6 RF Device Data Freescale Semiconductor
D, DRAIN EFFICIENCY (%)
TYPICAL CHARACTERISTICS
22 VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz 20 Channel Bandwidth Gps, POWER GAIN (dB) 18 16 14 12 10 1 10 Gps 85_C TC = -30_C ACPR D Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 100 25_C -30_C 30 20 10 0 300 -30_C 25_C 85_C 50 D, DRAIN EFFICIENCY (%) 40 -10 -20 -30 -40 -50 -60 ACPR (dBc) -ACPR in 3.84 MHz Integrated BW 3.6 60 0
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
20 S21 16 -4 0
S21 (dB)
8 S11 4 0 1750 VDD = 28 Vdc IDQ = 1400 mA 1850 1950 2050 2150 2250 2350 2450
-12
-16
-20 2550
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 5.4 7.2 9 -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
PEAK-TO-AVERAGE (dB)
Figure 9. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
f, FREQUENCY (MHz)
Figure 10. Single - Carrier W - CDMA Spectrum MRF7S21210HSR3 RF Device Data Freescale Semiconductor 7
S11 (dB)
12
-8
Zo = 5
f = 2220 MHz
f = 2220 MHz f = 2060 MHz Zsource
Zload f = 2060 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 4.34 - j1.26 4.34 - j1.20 4.34 - j1.14 4.33 - j1.09 4.34 - j1.05 4.33 - j0.96 4.33 - j0.92 4.33 - j0.92 4.32 - j0.87 Zload W 1.52 - j1.46 1.47 - j1.35 1.42 - j1.23 1.37 - j1.11 1.32 - j0.99 1.27 - j0.87 1.23 - j0.75 1.19 - j0.64 1.15 - j0.52
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance MRF7S21210HSR3 8 RF Device Data Freescale Semiconductor
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
60 59 Pout, OUTPUT POWER (dBm) 58 57 56 55 54 53 52 51 50 31 32 33 34 35 36 37 38 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level Zsource P1dB 5.21 - j0.31 Zload 1.23 - j1.06 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 sec(on), 10% Duty Cycle, f = 2140 MHz Actual P1dB = 54.61 dBm (289 W) P3dB = 55.47 dBm (352 W) Ideal
Figure 12. Pulsed CW Output Power versus Input Power @ 28 V
MRF7S21210HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
(FLANGE)
B
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S21210HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF7S21210HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date July 2008 * Initial Release of Data Sheet Description
MRF7S21210HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S21210HSR3
Rev. 12 0, 7/2008 Document Number: MRF7S21210H
RF Device Data Freescale Semiconductor

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